@inproceedings{15b37b853dda448081f3d85f4c9f80fa,
title = "DC and RF performance of diamond MISFETs with alumina gate insulator",
abstract = "We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.",
keywords = "Diamond, Gate Insulator, MISFETs, RF",
author = "Kazuyuki Hirama and Yoshikatsu Jingu and Masaru Ichikawa and Hitoshi Umezawa and Hiroshi Kawarada",
year = "2009",
month = jan,
day = "1",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1349--1351",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}