Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira*, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

Original languageEnglish
Pages (from-to)1814-1818
Number of pages5
JournalDiamond and Related Materials
Issue number10-11
Publication statusPublished - 2003


  • Diamond MISFETs
  • Sub-micron gate
  • Transconductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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