Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata; Y. Nagao; Yuichi Matsushima

doi:10.1016/S0022-0248(98)01523-1

Delta p⁺-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata^*, Y. Nagao, Yuichi Matsushima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n⁺-i-δp⁺-i-n^- structure of In_0.53Ga_0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

Original language	English
Pages (from-to)	1065-1068
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01523-1
Publication status	Published - 1999 May
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1016/S0022-0248(98)01523-1

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title = "Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory",

abstract = "We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.",

author = "H. Sakata and Y. Nagao and Yuichi Matsushima",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01523-1",

language = "English",

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journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

AU - Sakata, H.

AU - Nagao, Y.

AU - Matsushima, Yuichi

PY - 1999/5

Y1 - 1999/5

N2 - We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

AB - We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

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U2 - 10.1016/S0022-0248(98)01523-1

DO - 10.1016/S0022-0248(98)01523-1

M3 - Article

AN - SCOPUS:0032659942

SN - 0022-0248

VL - 201

SP - 1065

EP - 1068

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Delta p⁺-doped InGaAs grown by gas source MBE for novel optoelectronic memory

Abstract

ASJC Scopus subject areas

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