Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

A. Seike; H. Takai; I. Tsuchida; J. Masuda; D. Kosemura; A. Ogura; T. Watanabe; I. Ohdomari

doi:10.1149/1.3206641

Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

A. Seike^*, H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id _s-V_bg curves of the devices. Normalized transconductance, g_m ^*, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Publisher	Electrochemical Society Inc.
Pages	427-430
Number of pages	4
Edition	6
ISBN (Electronic)	9781607680932
ISBN (Print)	9781566777438
DOIs	https://doi.org/10.1149/1.3206641
Publication status	Published - 2009
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3206641

Cite this

Seike, A., Takai, H., Tsuchida, I., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 427-430). (ECS Transactions; Vol. 25, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3206641

Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs. / Seike, A.; Takai, H.; Tsuchida, I. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society Inc., 2009. p. 427-430 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Seike, A, Takai, H, Tsuchida, I, Masuda, J, Kosemura, D, Ogura, A, Watanabe, T & Ohdomari, I 2009, Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, Electrochemical Society Inc., pp. 427-430, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206641

@inproceedings{9143474f6df54b32ae18fd28c9ded80e,

title = "Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs",

abstract = "Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.",

author = "A. Seike and H. Takai and I. Tsuchida and J. Masuda and D. Kosemura and A. Ogura and T. Watanabe and I. Ohdomari",

year = "2009",

doi = "10.1149/1.3206641",

language = "English",

isbn = "9781566777438",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "427--430",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",

edition = "6",

note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",

}

TY - GEN

T1 - Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

AU - Seike, A.

AU - Takai, H.

AU - Tsuchida, I.

AU - Masuda, J.

AU - Kosemura, D.

AU - Ogura, A.

AU - Watanabe, T.

AU - Ohdomari, I.

PY - 2009

Y1 - 2009

N2 - Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

AB - Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

UR - http://www.scopus.com/inward/record.url?scp=76549111983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76549111983&partnerID=8YFLogxK

U2 - 10.1149/1.3206641

DO - 10.1149/1.3206641

M3 - Conference contribution

AN - SCOPUS:76549111983

SN - 9781566777438

T3 - ECS Transactions

SP - 427

EP - 430

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7

PB - Electrochemical Society Inc.

T2 - 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society

Y2 - 5 October 2009 through 7 October 2009

ER -

Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this