Densification of SiC by colloidal processing and SPS without sintering additives

T. S. Suzuki*, T. Uchikoshi, Y. Sakka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Silicon carbide is one of the most important ceramics used as structural and functional materials in a wide variety of applications. Many studies have reported the densification of SiC using oxide and nonoxide additives such as the Al2O3, B4C and Al-B-C system. However, it is difficult to densify SiC at temperatures below 2000°C without sintering additives even if spark plasma sintering (SPS) is used. The authors attempted to densify SiC using colloidal processing and SPS without sintering additives. A commercially available SiC powder with the average particle size of 0.55 mm was used as the starting material. The densities of the green body prepared by slip casting and the sintered body by SPS were 65.5 and 98.7% respectively.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalAdvances in Applied Ceramics
Issue number2
Publication statusPublished - 2014 Feb
Externally publishedYes


  • Bimodal particle size distribution
  • Dispersion
  • Packing density
  • Sintering atmosphere
  • Slurry

ASJC Scopus subject areas

  • Ceramics and Composites
  • Industrial and Manufacturing Engineering


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