Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

Kazuki Arakawa; Takahiko Yanagitani; Kazuhiko Kano; Akihiko Teshigahara; Morito Akiyama

doi:10.1109/ULTSYM.2010.5935747

Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

Kazuki Arakawa^*, Takahiko Yanagitani, Kazuhiko Kano, Akihiko Teshigahara, Morito Akiyama

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Citations (Scopus)

Abstract

It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle 33) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k ₁₅' values of 0.32 in spite of its low degree of orientation.

Original language	English
Title of host publication	2010 IEEE International Ultrasonics Symposium, IUS 2010
Pages	1050-1053
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2010.5935747
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States Duration: 2010 Oct 11 → 2010 Oct 14

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Other

Other	2010 IEEE International Ultrasonics Symposium, IUS 2010
Country/Territory	United States
City	San Diego, CA
Period	10/10/11 → 10/10/14

Keywords

RF magnetron sputtering
ScAl alloy target
ScAlN films
c axis tilted films

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2010.5935747

Cite this

Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering. / Arakawa, Kazuki; Yanagitani, Takahiko; Kano, Kazuhiko et al.
2010 IEEE International Ultrasonics Symposium, IUS 2010. 2010. p. 1050-1053 5935747 (Proceedings - IEEE Ultrasonics Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Arakawa, K, Yanagitani, T, Kano, K, Teshigahara, A & Akiyama, M 2010, Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering. in 2010 IEEE International Ultrasonics Symposium, IUS 2010., 5935747, Proceedings - IEEE Ultrasonics Symposium, pp. 1050-1053, 2010 IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/ULTSYM.2010.5935747

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title = "Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering",

abstract = "It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle 33) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k 15' values of 0.32 in spite of its low degree of orientation.",

keywords = "RF magnetron sputtering, ScAl alloy target, ScAlN films, c axis tilted films",

author = "Kazuki Arakawa and Takahiko Yanagitani and Kazuhiko Kano and Akihiko Teshigahara and Morito Akiyama",

year = "2010",

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AU - Arakawa, Kazuki

AU - Yanagitani, Takahiko

AU - Kano, Kazuhiko

AU - Teshigahara, Akihiko

AU - Akiyama, Morito

PY - 2010

Y1 - 2010

N2 - It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle 33) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k 15' values of 0.32 in spite of its low degree of orientation.

AB - It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle 33) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k 15' values of 0.32 in spite of its low degree of orientation.

KW - RF magnetron sputtering

KW - ScAl alloy target

KW - ScAlN films

KW - c axis tilted films

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Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

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Keywords

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