TY - GEN
T1 - Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection
AU - Sakaue, K.
AU - Washio, M.
AU - Endo, A.
PY - 2010
Y1 - 2010
N2 - We will present a design of high brightness light source for EUV lithography mask inspection. The required system parameters are minimum brightness of 2500W/mm2/Sr at 13.5nm/2% bandwidth. Our design consists of superconducting DC RF-gun as a radiator and 10.74nm CO2 laser stacked in an optical cavity as a laser undulator. Recent achievements of each component technologies, which is 1.3GHz SC-RF-gun, 10kW average power short pulse CO2 laser, and laser storage optical super-cavity, indicate the feasibility of producing required brightness based on laser Compton undulator. Design parameters of high brightness EUV source, the technological gap of the present component technologies and required further developments will be resented at the conference.
AB - We will present a design of high brightness light source for EUV lithography mask inspection. The required system parameters are minimum brightness of 2500W/mm2/Sr at 13.5nm/2% bandwidth. Our design consists of superconducting DC RF-gun as a radiator and 10.74nm CO2 laser stacked in an optical cavity as a laser undulator. Recent achievements of each component technologies, which is 1.3GHz SC-RF-gun, 10kW average power short pulse CO2 laser, and laser storage optical super-cavity, indicate the feasibility of producing required brightness based on laser Compton undulator. Design parameters of high brightness EUV source, the technological gap of the present component technologies and required further developments will be resented at the conference.
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M3 - Conference contribution
AN - SCOPUS:84886929495
SN - 9789290833529
T3 - IPAC 2010 - 1st International Particle Accelerator Conference
SP - 148
EP - 150
BT - IPAC 2010 - 1st International Particle Accelerator Conference
T2 - 1st International Particle Accelerator Conference, IPAC 2010
Y2 - 23 May 2010 through 28 May 2010
ER -