TY - JOUR
T1 - Designing a bileg silicon-nanowire thermoelectric generator with cavity-free structure
AU - Mahfuz, Md Mehdee Hasan
AU - Tomita, Motohiro
AU - Hirao, Shuhei
AU - Katayama, Kazuaki
AU - Oda, Kaito
AU - Matsukawa, Takashi
AU - Matsuki, Takeo
AU - Watanabe, Takanobu
N1 - Funding Information:
This work was supported by the JST-CREST (Grant Nos. JPMJCR15Q7 and JPMJCR19Q5), NIMS Nanofabrication Platform and AIST-SCR. We are grateful to Mr. Kawaguchi of Hamamatsu Photonics K.K. for providing stealth dicing.
Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/5
Y1 - 2021/5
N2 - Thermoelectric (TE) generators play an important role in preventing an energy crisis and environmental deterioration by converting wasted heat, generated by various human activities, into electrical energy. This work is the first experimental demonstration of a bileg Si-nanowire (Si-NW) micro thermoelectric generator with cavity-free architecture for designing a large-scale integrated planar Si-NW TE generator. In the bileg-TE generator, the mobility and thermopower mismatches between electron and hole effects on the optimum dimensional parameters of n- and p-type Si-NWs and optimum dose of impurity. In this work, under a specific ion dose condition, the best p-type NW width exists at less than 100 nm when the n-type NW width is 60 nm. The experimental dependency of the power density on the p-type NW width is in agreement with the estimation of an equivalent heat-electrical circuit model.
AB - Thermoelectric (TE) generators play an important role in preventing an energy crisis and environmental deterioration by converting wasted heat, generated by various human activities, into electrical energy. This work is the first experimental demonstration of a bileg Si-nanowire (Si-NW) micro thermoelectric generator with cavity-free architecture for designing a large-scale integrated planar Si-NW TE generator. In the bileg-TE generator, the mobility and thermopower mismatches between electron and hole effects on the optimum dimensional parameters of n- and p-type Si-NWs and optimum dose of impurity. In this work, under a specific ion dose condition, the best p-type NW width exists at less than 100 nm when the n-type NW width is 60 nm. The experimental dependency of the power density on the p-type NW width is in agreement with the estimation of an equivalent heat-electrical circuit model.
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U2 - 10.35848/1347-4065/abd9d0
DO - 10.35848/1347-4065/abd9d0
M3 - Article
AN - SCOPUS:85101240618
SN - 0021-4922
VL - 60
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - SB
M1 - SBBF07
ER -