Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

H. Gotoh; T. Akasaka; T. Tawara; Y. Kobayashi; T. Makimoto; H. Nakano

doi:10.1016/j.ssc.2006.04.006

Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

H. Gotoh^*, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

Original language	English
Pages (from-to)	590-593
Number of pages	4
Journal	Solid State Communications
Volume	138
Issue number	12
DOIs	https://doi.org/10.1016/j.ssc.2006.04.006
Publication status	Published - 2006 Jun
Externally published	Yes

Keywords

A. Nitride semiconductors
D. Localized excitons
D. Optical properties
D. Sharp photoluminescence

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2006.04.006

Cite this

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title = "Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique",

abstract = "Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.",

keywords = "A. Nitride semiconductors, D. Localized excitons, D. Optical properties, D. Sharp photoluminescence",

author = "H. Gotoh and T. Akasaka and T. Tawara and Y. Kobayashi and T. Makimoto and H. Nakano",

year = "2006",

month = jun,

doi = "10.1016/j.ssc.2006.04.006",

language = "English",

volume = "138",

pages = "590--593",

journal = "Solid State Communications",

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number = "12",

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TY - JOUR

T1 - Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

AU - Gotoh, H.

AU - Akasaka, T.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Makimoto, T.

AU - Nakano, H.

PY - 2006/6

Y1 - 2006/6

N2 - Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

AB - Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

KW - A. Nitride semiconductors

KW - D. Localized excitons

KW - D. Optical properties

KW - D. Sharp photoluminescence

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U2 - 10.1016/j.ssc.2006.04.006

DO - 10.1016/j.ssc.2006.04.006

M3 - Article

AN - SCOPUS:33745235770

SN - 0038-1098

VL - 138

SP - 590

EP - 593

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

Abstract

Keywords

ASJC Scopus subject areas

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