Determination of interface-state distributions in polymer-based metal-insulator-semiconductor capacitors by impedance spectroscopy

Hideyuki Hatta, Yuhi Miyagawa, Takashi Nagase*, Takashi Kobayashi, Takashi Hamada, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.

Original languageEnglish
Article number1493
JournalApplied Sciences (Switzerland)
Issue number9
Publication statusPublished - 2018 Aug 29
Externally publishedYes


  • Impedance spectroscopy
  • Interface states
  • Organic field-effect transistor
  • Organic metal-insulator-semiconductor capacitor
  • Polymer gate insulator

ASJC Scopus subject areas

  • General Materials Science
  • Instrumentation
  • General Engineering
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes


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