TY - GEN
T1 - Deterministic doping to silicon and diamond materials for quantum processing
AU - Shinada, Takahiro
AU - Prati, Enrico
AU - Tanii, Takashi
AU - Teraji, Tokuyuki
AU - Onoda, Shinobu
AU - Jelezko, Fedor
AU - Isoya, Junnichi
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
AB - Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
UR - http://www.scopus.com/inward/record.url?scp=85006957171&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006957171&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751573
DO - 10.1109/NANO.2016.7751573
M3 - Conference contribution
AN - SCOPUS:85006957171
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 888
EP - 890
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -