Development and applications of a Si nano-photodiode with a surface plasmon antenna

Keishi Ohashi*, Junichi Fujikata, Tsutomu Ishi, Daisuke Okamoto, Kikuo Makita, Kenichi Nishi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We developed a nano-photodiode that confines and absorbs the sub-wavelength-size optical near field in small-scale silicon. A surface plasmon resonance antenna is used to enhance the near field in silicon. The response time of the nanophotodiodes is shorter than that of conventional photodiodes because the separation between anode and cathode and the size of the electrodes can be as small as one thousandth of that for conventional photodiodes. The full-width at half-maximum of the impulse response of the silicon nano-photodiode was as fast as ∼20 ps even when the bias voltage was less than 1 V. This nano-photodiode technology can be applied to other semiconductor materials such as germanium and ternary compound semiconductors.

Original languageEnglish
Title of host publicationOptoelectronic Materials and Devices
Publication statusPublished - 2006 Dec 27
Externally publishedYes
EventOptoelectronic Materials and Devices - Gwangju, Korea, Republic of
Duration: 2006 Sept 52006 Sept 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6352 II
ISSN (Print)0277-786X


ConferenceOptoelectronic Materials and Devices
Country/TerritoryKorea, Republic of


  • Diffraction limit
  • Nano-optics
  • Near field
  • Photodiode
  • Silicon
  • Silicon photonics
  • Surface-plasmons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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