Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka*, Takefumi Mitani, Shin Watanabe, Kazuhiro Nakazawa, Kousuke Oonuki, Goro Sato, Tadayuki Takahashi, Ken'ichi Tamura, Hiroyasu Tajima, Hidehito Nakamura, Masaharu Nomachi, Tatsuya Nakamoto, Yasushi Fukazawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

Original languageEnglish
Article number28
Pages (from-to)229-240
Number of pages12
JournalUnknown Journal
Publication statusPublished - 2004


  • CdTe
  • Compton telescope
  • Gamma-ray
  • Semicondictor detector
  • Silicon Strip Detector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


Dive into the research topics of 'Development of a Si/CdTe semiconductor Compton telescope'. Together they form a unique fingerprint.

Cite this