Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka; Takefumi Mitani; Shin Watanabe; Kazuhiro Nakazawa; Kousuke Oonuki; Goro Sato; Tadayuki Takahashi; Ken'ichi Tamura; Hiroyasu Tajima; Hidehito Nakamura; Masaharu Nomachi; Tatsuya Nakamoto; Yasushi Fukazawa

doi:10.1117/12.552600

Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka^*, Takefumi Mitani, Shin Watanabe, Kazuhiro Nakazawa, Kousuke Oonuki, Goro Sato, Tadayuki Takahashi, Ken'ichi Tamura, Hiroyasu Tajima, Hidehito Nakamura, Masaharu Nomachi, Tatsuya Nakamoto, Yasushi Fukazawa

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

Original language	English
Article number	28
Pages (from-to)	229-240
Number of pages	12
Journal	Unknown Journal
Volume	5501
DOIs	https://doi.org/10.1117/12.552600
Publication status	Published - 2004

Keywords

CdTe
Compton telescope
Gamma-ray
Semicondictor detector
Silicon Strip Detector

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.552600

Cite this

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title = "Development of a Si/CdTe semiconductor Compton telescope",

abstract = "We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.",

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T1 - Development of a Si/CdTe semiconductor Compton telescope

AU - Tanaka, Takaaki

AU - Mitani, Takefumi

AU - Watanabe, Shin

AU - Nakazawa, Kazuhiro

AU - Oonuki, Kousuke

AU - Sato, Goro

AU - Takahashi, Tadayuki

AU - Tamura, Ken'ichi

AU - Tajima, Hiroyasu

AU - Nakamura, Hidehito

AU - Nomachi, Masaharu

AU - Nakamoto, Tatsuya

AU - Fukazawa, Yasushi

PY - 2004

Y1 - 2004

N2 - We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

AB - We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

KW - CdTe

KW - Compton telescope

KW - Gamma-ray

KW - Semicondictor detector

KW - Silicon Strip Detector

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DO - 10.1117/12.552600

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JO - Unknown Journal

JF - Unknown Journal

M1 - 28

ER -

Development of a Si/CdTe semiconductor Compton telescope

Abstract

Keywords

ASJC Scopus subject areas

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