Development of an epitaxial growth technique using iii-v on a si platform for heterogeneous integration of membrane photonic devices on si

Engineering & Materials Science

• Photonic devices 100%
• Epitaxial growth 89%
• Photonics 73%
• Membranes 53%
• Semiconductor quantum wells 39%
• Integrated circuits 35%
• Indium 33%
• Energy gap 28%
• Aluminum gallium arsenide 26%
• Lattice mismatch 22%
• III-V semiconductors 21%
• Distributed feedback lasers 20%
• Optical transmitters 19%
• Fabrication 18%
• Gallium arsenide 18%
• Substrates 17%
• Phase boundaries 17%
• Semiconductor lasers 15%
• Light sources 13%
• Modulators 13%
• Thermal expansion 12%
• Crystals 12%
• Transmitters 10%
• Modulation 9%
• Costs 9%
• Lasers 9%
• Degradation 8%
• Temperature 5%

Physics & Astronomy

• platforms 53%
• membranes 46%
• photonics 43%
• integrated circuits 30%
• transmitters 20%
• indium gallium arsenides 17%
• butt joints 16%
• quantum wells 16%
• phosphides 14%
• antiphase boundaries 12%
• fabrication 12%
• distributed feedback lasers 12%
• indium 10%
• aluminum gallium arsenides 10%
• thermal expansion 9%
• modulators 9%
• manufacturing 8%
• light sources 8%
• chips 8%
• semiconductor lasers 8%
• costs 8%
• degradation 7%
• modulation 7%
• evaluation 6%
• crystals 5%
• lasers 4%
• temperature 3%
• energy 3%

Chemical Compounds

• Antiphase Boundary 53%
• Band Gap 47%
• Thermal Expansion 33%
• Semiconductor 24%
• Energy 15%