Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

Hirokazu Odaka*, Soichiro Sugimoto, Shin Nosuke Ishikawa, Junichiro Katsuta, Yuu Koseki, Taro Fukuyama, Shinya Saito, Rie Sato, Goro Sato, Shin Watanabe, Motohide Kokubun, Tadayuki Takahashi, Shin'Ichiro Takeda, Yasushi Fukazawa, Takaaki Tanaka, Hiroyasu Tajima

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

Original languageEnglish
Pages (from-to)303-309
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number2
Publication statusPublished - 2010 Dec 11


  • Compton camera
  • Gamma-ray detector
  • Monte Carlo simulation

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics


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