Development of compact coherent EUV source based on laser Compton scattering

S. Kashiwagi*, R. Kato, G. Isoyama, K. Sakaue, A. Masuda, T. Nomoto, T. Gowa, M. Washio, R. Kuroda, J. Urakawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start to develop a compact EUV source in the spectral range 13-14 nm, which is based on a laser Compton scattering between a 7 MeV micro-bucnhed electron beam and a high-intensity CO2 laser pulse. The electron beam extracted from a DC photocathode gun is micro-bunched using a laser modulation techinque with the Compton wavelength at a harmonic of the seeding laser before the main laser Compton scattering for EUV generation. A considerating scheme for the compact EUV source based on the laser Compton scattering with micro-bunched electron beam and the analytical study of micro-bunch generation are described in this paper.

Original languageEnglish
Pages (from-to)1112-1115
Number of pages4
JournalRadiation Physics and Chemistry
Issue number12
Publication statusPublished - 2009 Dec


  • Coherent
  • Compton scattering
  • EUV
  • Free electron laser (FEL)
  • Linac
  • Micro-bunched beam

ASJC Scopus subject areas

  • Radiation


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