Development of compact EUV source based on laser compton scattering

S. Kashiwagi*, R. Kato, J. Yang, G. Isoyama, K. Sakaue, A. Masuda, T. Nomoto, T. Gowa, M. Washio, R. Kuroda, J. Urakawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

Original languageEnglish
Title of host publicationProceedings of the IEEE Particle Accelerator Conference, PAC07
Number of pages3
Publication statusPublished - 2007
EventIEEE Particle Accelerator Conference, PAC07 - Albuquerque, NM, United States
Duration: 2007 Jun 252007 Jun 29

Publication series

NameProceedings of the IEEE Particle Accelerator Conference


ConferenceIEEE Particle Accelerator Conference, PAC07
Country/TerritoryUnited States
CityAlbuquerque, NM

ASJC Scopus subject areas

  • Engineering(all)


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