Development of compact EUV source based on laser compton scattering

S. Kashiwagi; R. Kato; J. Yang; G. Isoyama; K. Sakaue; A. Masuda; T. Nomoto; T. Gowa; M. Washio; R. Kuroda; J. Urakawa

doi:10.1109/PAC.2007.4440580

Development of compact EUV source based on laser compton scattering

S. Kashiwagi^*, R. Kato, J. Yang, G. Isoyama, K. Sakaue, A. Masuda, T. Nomoto, T. Gowa, M. Washio, R. Kuroda, J. Urakawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO₂ laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

Original language	English
Title of host publication	Proceedings of the IEEE Particle Accelerator Conference, PAC07
Pages	2799-2801
Number of pages	3
DOIs	https://doi.org/10.1109/PAC.2007.4440580
Publication status	Published - 2007
Event	IEEE Particle Accelerator Conference, PAC07 - Albuquerque, NM, United States Duration: 2007 Jun 25 → 2007 Jun 29

Publication series

Name	Proceedings of the IEEE Particle Accelerator Conference

Conference

Conference	IEEE Particle Accelerator Conference, PAC07
Country/Territory	United States
City	Albuquerque, NM
Period	07/6/25 → 07/6/29

ASJC Scopus subject areas

Engineering(all)

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10.1109/PAC.2007.4440580

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Kashiwagi, S., Kato, R., Yang, J., Isoyama, G., Sakaue, K., Masuda, A., Nomoto, T., Gowa, T., Washio, M., Kuroda, R., & Urakawa, J. (2007). Development of compact EUV source based on laser compton scattering. In Proceedings of the IEEE Particle Accelerator Conference, PAC07 (pp. 2799-2801). Article 4440580 (Proceedings of the IEEE Particle Accelerator Conference). https://doi.org/10.1109/PAC.2007.4440580

Kashiwagi, S, Kato, R, Yang, J, Isoyama, G, Sakaue, K, Masuda, A, Nomoto, T, Gowa, T, Washio, M, Kuroda, R & Urakawa, J 2007, Development of compact EUV source based on laser compton scattering. in Proceedings of the IEEE Particle Accelerator Conference, PAC07., 4440580, Proceedings of the IEEE Particle Accelerator Conference, pp. 2799-2801, IEEE Particle Accelerator Conference, PAC07, Albuquerque, NM, United States, 07/6/25. https://doi.org/10.1109/PAC.2007.4440580

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title = "Development of compact EUV source based on laser compton scattering",

abstract = "High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.",

author = "S. Kashiwagi and R. Kato and J. Yang and G. Isoyama and K. Sakaue and A. Masuda and T. Nomoto and T. Gowa and M. Washio and R. Kuroda and J. Urakawa",

year = "2007",

doi = "10.1109/PAC.2007.4440580",

language = "English",

isbn = "1424409179",

series = "Proceedings of the IEEE Particle Accelerator Conference",

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AU - Kashiwagi, S.

AU - Kato, R.

AU - Yang, J.

AU - Isoyama, G.

AU - Sakaue, K.

AU - Masuda, A.

AU - Nomoto, T.

AU - Gowa, T.

AU - Washio, M.

AU - Kuroda, R.

AU - Urakawa, J.

PY - 2007

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N2 - High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

AB - High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

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Development of compact EUV source based on laser compton scattering

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