Development of current detecting circuit with wiring inductance of power semiconductor module

Masaki Nagataki*, Masahiro Nagasu, Masamitsu Inaba, Yasuhiro Nemoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A high voltage and large capacity power semiconductor module has a sense-emitter terminal and emitter terminal for the gate drive. There exists a parasitic wiring inductance between the sense-emitter terminal and emitter terminal. When current flows through a module, induction voltage (differential value of module current) is generated. In this study, we develop a circuit that detects the current flowing through the module by integrating the induction voltage. The integrator has the problem of integral error. It was confirmed that this problem can be solved by adopting a method of reducing the output of the integrator during energization. Further, resistance exists in the wiring inductance. It was shown that this can be solved by using the metal-oxide-semiconductor field-effect-transistor (MOSFET). Finally, experiments were conducted using a 3300 V/450A IGBT module. Through the results of the experiments, it was confirmed that the proposed circuit can detect the current and abnormal current, such as the short circuit current through a power semiconductor module.

Original languageEnglish
Pages (from-to)676-683
Number of pages8
Journalieej transactions on industry applications
Issue number8
Publication statusPublished - 2018
Externally publishedYes


  • Current detecting circuit
  • Power semiconductor module
  • Wiring inductance

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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