Development of novel photodiodes as a photon counter

T. Miyachi*, T. Edamura, S. Furuta, Nobuyuki Hasebe, M. Higuchi, M. Ishiwata, H. Kan, R. Kikuchi, T. Masumura, T. Matsuyama, A. Misaki, I. Nakamura, T. Sugawara, T. Tazawa, C. Tezuka

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    Superlattice type photodiodes of a GaAs-AlXGa1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 1018cm-3 at room temperature on the multiplication rate is discussed.

    Original languageEnglish
    Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
    EditorsD. Merelli, J. Surget, M. Ulma
    Publication statusPublished - 2000
    Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon
    Duration: 2000 Oct 152000 Oct 20


    Other2000 IEEE Nuclear Science Symposium Conference Record

    ASJC Scopus subject areas

    • Computer Vision and Pattern Recognition
    • Industrial and Manufacturing Engineering


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