Development of novel photodiodes as a photon counter

T. Miyachi; T. Edamura; S. Furuta; Nobuyuki Hasebe; M. Higuchi; M. Ishiwata; H. Kan; R. Kikuchi; T. Masumura; T. Matsuyama; A. Misaki; I. Nakamura; T. Sugawara; T. Tazawa; C. Tezuka

Development of novel photodiodes as a photon counter

T. Miyachi^*, T. Edamura, S. Furuta, Nobuyuki Hasebe, M. Higuchi, M. Ishiwata, H. Kan, R. Kikuchi, T. Masumura, T. Matsuyama, A. Misaki, I. Nakamura, T. Sugawara, T. Tazawa, C. Tezuka

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Superlattice type photodiodes of a GaAs-Al_XGa_1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 10¹⁸cm^-3 at room temperature on the multiplication rate is discussed.

Original language	English
Title of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference
Editors	D. Merelli, J. Surget, M. Ulma
Volume	1
Publication status	Published - 2000
Event	2000 IEEE Nuclear Science Symposium Conference Record - Lyon Duration: 2000 Oct 15 → 2000 Oct 20

Other

Other	2000 IEEE Nuclear Science Symposium Conference Record
City	Lyon
Period	00/10/15 → 00/10/20

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Industrial and Manufacturing Engineering

Cite this

Miyachi, T, Edamura, T, Furuta, S, Hasebe, N, Higuchi, M, Ishiwata, M, Kan, H, Kikuchi, R, Masumura, T, Matsuyama, T, Misaki, A, Nakamura, I, Sugawara, T, Tazawa, T & Tezuka, C 2000, Development of novel photodiodes as a photon counter. in D Merelli, J Surget & M Ulma (eds), IEEE Nuclear Science Symposium and Medical Imaging Conference. vol. 1, 2000 IEEE Nuclear Science Symposium Conference Record, Lyon, 00/10/15.

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title = "Development of novel photodiodes as a photon counter",

abstract = "Superlattice type photodiodes of a GaAs-AlXGa1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 1018cm-3 at room temperature on the multiplication rate is discussed.",

author = "T. Miyachi and T. Edamura and S. Furuta and Nobuyuki Hasebe and M. Higuchi and M. Ishiwata and H. Kan and R. Kikuchi and T. Masumura and T. Matsuyama and A. Misaki and I. Nakamura and T. Sugawara and T. Tazawa and C. Tezuka",

year = "2000",

language = "English",

volume = "1",

editor = "D. Merelli and J. Surget and M. Ulma",

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note = "2000 IEEE Nuclear Science Symposium Conference Record ; Conference date: 15-10-2000 Through 20-10-2000",

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TY - GEN

T1 - Development of novel photodiodes as a photon counter

AU - Miyachi, T.

AU - Edamura, T.

AU - Furuta, S.

AU - Hasebe, Nobuyuki

AU - Higuchi, M.

AU - Ishiwata, M.

AU - Kan, H.

AU - Kikuchi, R.

AU - Masumura, T.

AU - Matsuyama, T.

AU - Misaki, A.

AU - Nakamura, I.

AU - Sugawara, T.

AU - Tazawa, T.

AU - Tezuka, C.

PY - 2000

Y1 - 2000

N2 - Superlattice type photodiodes of a GaAs-AlXGa1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 1018cm-3 at room temperature on the multiplication rate is discussed.

AB - Superlattice type photodiodes of a GaAs-AlXGa1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 1018cm-3 at room temperature on the multiplication rate is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0034594120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034594120&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034594120

VL - 1

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

A2 - Merelli, D.

A2 - Surget, J.

A2 - Ulma, M.

T2 - 2000 IEEE Nuclear Science Symposium Conference Record

Y2 - 15 October 2000 through 20 October 2000

ER -

Development of novel photodiodes as a photon counter

Abstract

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ASJC Scopus subject areas

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