Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

Kohei Tatsumi; Masakazu Inagaki; Kazuhito Kamei; Tomonori Iizuka; Hiroaki Narimatsu; Nobuaki Sato; Koji Shimizu; Kazutoshi Ueda; Akihiro Imakire; Masayuki Hikita; Rikiya Kamimura; Kazuhiko Sugiura; Kazuhiro Tsuruta; Keiji Toda

doi:10.1109/ECTC.2017.103

Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

Kohei Tatsumi, Masakazu Inagaki, Kazuhito Kamei, Tomonori Iizuka, Hiroaki Narimatsu, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Akihiro Imakire, Masayuki Hikita, Rikiya Kamimura, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.

Original language	English
Title of host publication	Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1316-1321
Number of pages	6
ISBN (Electronic)	9781509043323
DOIs	https://doi.org/10.1109/ECTC.2017.103
Publication status	Published - 2017 Aug 1
Event	67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States Duration: 2017 May 30 → 2017 Jun 2

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Other

Other	67th IEEE Electronic Components and Technology Conference, ECTC 2017
Country/Territory	United States
City	Lake Buena Vista
Period	17/5/30 → 17/6/2

Keywords

EV
HEV
Inverter
Lead frame
MOSFET
Module
Nickel
Plating
SBD
SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2017.103

Cite this

Tatsumi, K., Inagaki, M., Kamei, K., Iizuka, T., Narimatsu, H., Sato, N., Shimizu, K., Ueda, K., Imakire, A., Hikita, M., Kamimura, R., Sugiura, K., Tsuruta, K., & Toda, K. (2017). Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application. In Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017 (pp. 1316-1321). Article 7999851 (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2017.103

Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application. / Tatsumi, Kohei; Inagaki, Masakazu; Kamei, Kazuhito et al.
Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1316-1321 7999851 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tatsumi, K, Inagaki, M, Kamei, K, Iizuka, T, Narimatsu, H, Sato, N, Shimizu, K, Ueda, K, Imakire, A, Hikita, M, Kamimura, R, Sugiura, K, Tsuruta, K & Toda, K 2017, Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application. in Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017., 7999851, Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1316-1321, 67th IEEE Electronic Components and Technology Conference, ECTC 2017, Lake Buena Vista, United States, 17/5/30. https://doi.org/10.1109/ECTC.2017.103

Tatsumi K, Inagaki M, Kamei K, Iizuka T, Narimatsu H, Sato N et al. Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application. In Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1316-1321. 7999851. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2017.103

Tatsumi, Kohei ; Inagaki, Masakazu ; Kamei, Kazuhito et al. / Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application. Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1316-1321 (Proceedings - Electronic Components and Technology Conference).

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abstract = "Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.",

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author = "Kohei Tatsumi and Masakazu Inagaki and Kazuhito Kamei and Tomonori Iizuka and Hiroaki Narimatsu and Nobuaki Sato and Koji Shimizu and Kazutoshi Ueda and Akihiro Imakire and Masayuki Hikita and Rikiya Kamimura and Kazuhiko Sugiura and Kazuhiro Tsuruta and Keiji Toda",

note = "Funding Information: This work was supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics/ Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile of next-generation SiC power electronics” (funding agency: NEDO) We acknowledge greatly to Tsukuba Power Electronics Constellations (TPEC) for their generous supply of SiC devices. Publisher Copyright: {\textcopyright} 2017 IEEE.; 67th IEEE Electronic Components and Technology Conference, ECTC 2017 ; Conference date: 30-05-2017 Through 02-06-2017",

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N2 - Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.

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Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

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Keywords

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