Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

T. Hamada; K. Tomatsu; T. Nagase; T. Kobayashi; S. Murakami; M. Watanabe; H. Naito; K. Matsukawa

Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

T. Hamada^*, K. Tomatsu, T. Nagase, T. Kobayashi, S. Murakami, M. Watanabe, H. Naito, K. Matsukawa

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.

Original language	English
Pages	599-600
Number of pages	2
Publication status	Published - 2007
Externally published	Yes
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5

Conference

Conference	14th International Display Workshops, IDW '07
Country/Territory	Japan
City	Sapporo
Period	07/12/5 → 07/12/5

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

Cite this

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title = "Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor",

abstract = "Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.",

author = "T. Hamada and K. Tomatsu and T. Nagase and T. Kobayashi and S. Murakami and M. Watanabe and H. Naito and K. Matsukawa",

year = "2007",

language = "English",

pages = "599--600",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

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TY - CONF

T1 - Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

AU - Hamada, T.

AU - Tomatsu, K.

AU - Nagase, T.

AU - Kobayashi, T.

AU - Murakami, S.

AU - Watanabe, M.

AU - Naito, H.

AU - Matsukawa, K.

PY - 2007

Y1 - 2007

N2 - Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.

AB - Silsesquioxane materials were prepared by a sol-gel method, which have many advantages such as low cost, solution processability, and so on. We have investigated polymethylsilsesquioxane (PMSQ)-type gate insulating thin films with good high resistivity and surface morphology. Top-contact organic field-effect transistors (OFET) devices were fabricated using PMSQ gate insulator and poly(3-hexylthiophene) (P3HT) as the organic semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=43349108445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43349108445&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:43349108445

SP - 599

EP - 600

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor

Abstract

Conference

ASJC Scopus subject areas

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