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Development of silsesquioxane-type gate insulating thin films for poly(3-hexylthiophene)-based field-effect transistor
T. Hamada*, K. Tomatsu, T. Nagase, T. Kobayashi, S. Murakami, M. Watanabe, H. Naito, K. Matsukawa
*Corresponding author for this work
Research output: Contribution to conference › Paper › peer-review