Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa; Tadashi Yasufuku; Satoshi Iida; Makoto Takamiya; Masahiro Nomura; Hirofumi Shinohara; Takayasu Sakurai

doi:10.1109/IEDM.2011.6131609

Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa^*, Tadashi Yasufuku, Satoshi Iida, Makoto Takamiya, Masahiro Nomura, Hirofumi Shinohara, Takayasu Sakurai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

In this paper, energy and minimum operating voltage (V _DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V _DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	25.1.1-25.1.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131609
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131609

Cite this

Fuketa, H., Yasufuku, T., Iida, S., Takamiya, M., Nomura, M., Shinohara, H., & Sakurai, T. (2011). Device-circuit interactions in extremely low voltage CMOS designs (invited). In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 25.1.1-25.1.4). Article 6131609 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131609

Device-circuit interactions in extremely low voltage CMOS designs (invited). / Fuketa, Hiroshi; Yasufuku, Tadashi; Iida, Satoshi et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 25.1.1-25.1.4 6131609 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fuketa, H, Yasufuku, T, Iida, S, Takamiya, M, Nomura, M, Shinohara, H & Sakurai, T 2011, Device-circuit interactions in extremely low voltage CMOS designs (invited). in 2011 International Electron Devices Meeting, IEDM 2011., 6131609, Technical Digest - International Electron Devices Meeting, IEDM, pp. 25.1.1-25.1.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131609

@inproceedings{7918964104d84f5db1c4ac31ee285fac,

title = "Device-circuit interactions in extremely low voltage CMOS designs (invited)",

abstract = "In this paper, energy and minimum operating voltage (V DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.",

author = "Hiroshi Fuketa and Tadashi Yasufuku and Satoshi Iida and Makoto Takamiya and Masahiro Nomura and Hirofumi Shinohara and Takayasu Sakurai",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131609",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "25.1.1--25.1.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

TY - GEN

T1 - Device-circuit interactions in extremely low voltage CMOS designs (invited)

AU - Fuketa, Hiroshi

AU - Yasufuku, Tadashi

AU - Iida, Satoshi

AU - Takamiya, Makoto

AU - Nomura, Masahiro

AU - Shinohara, Hirofumi

AU - Sakurai, Takayasu

PY - 2011/12/1

Y1 - 2011/12/1

N2 - In this paper, energy and minimum operating voltage (V DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

AB - In this paper, energy and minimum operating voltage (V DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

UR - http://www.scopus.com/inward/record.url?scp=84857021969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857021969&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131609

DO - 10.1109/IEDM.2011.6131609

M3 - Conference contribution

AN - SCOPUS:84857021969

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 25.1.1-25.1.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Device-circuit interactions in extremely low voltage CMOS designs (invited)

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this