Device formation and the characterizations

As discussed in Chapter 3, Fundamental material’s nature of diamond, semiconductor diamonds are expected to decrease both conduction and switching losses of power devices. High temperature reliability and radiation hardness are also expected because of the large bandgap and strong covalent bond of diamond. This chapter reviews the state of the art of various devices such as unipolar and bipolar devices, especially Schottky barrier diodes, metal-semiconductor field-effect transistors, junction FETs, metal-oxide-semiconductor field-effect transistors (FETs), pin diodes, and bipolar junction transistors. Novel diamond devices such as Schottky-pn diode and cold cathode emitter, which overcome the trade-off relationship between on-resistance and breakdown voltage, will also be discussed.