Diamond-based RF power transistors: Fundamentals and applications

M. Kasu*, K. Ueda, Y. Yamauchi, A. Tallaire, T. Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

102 Citations (Scopus)


The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.

Original languageEnglish
Pages (from-to)1010-1015
Number of pages6
JournalDiamond and Related Materials
Issue number4-7 SPEC. ISS.
Publication statusPublished - 2007 Apr
Externally publishedYes


  • Diamond
  • Hydrogen passivation
  • RF characteristics
  • Transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Chemistry(all)
  • Electrical and Electronic Engineering


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