Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator

Norikazu Taniyama; Minoru Kudo; Osamu Matsumoto; Hiroshi Kawarada

doi:10.1143/jjap.40.l698

Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator

Norikazu Taniyama^*, Minoru Kudo, Osamu Matsumoto, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Diamond deposition on a large area silicon wafer substrate (ø100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.

Original language	English
Pages (from-to)	L698-L700
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	7 A
DOIs	https://doi.org/10.1143/jjap.40.l698
Publication status	Published - 2001 Jul 1

Keywords

ACMPG
CVD
Coaxial cable
Deposition
Diamond
Electrode
Heated substrate
Large area
Microwave
Plasma

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.l698

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Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator. / Taniyama, Norikazu; Kudo, Minoru; Matsumoto, Osamu et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 7 A, 01.07.2001, p. L698-L700.

Research output: Contribution to journal › Article › peer-review

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abstract = "Diamond deposition on a large area silicon wafer substrate ({\o}100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.",

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AU - Kawarada, Hiroshi

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N2 - Diamond deposition on a large area silicon wafer substrate (ø100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.

AB - Diamond deposition on a large area silicon wafer substrate (ø100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.

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Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator

Abstract

Keywords

ASJC Scopus subject areas

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