Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz

K. Ueda; M. Kasu; Y. Yamauchi; T. Makimoto; M. Schwitters; D. J. Twitchen; G. A. Scarsbrook; S. E. Coe

doi:10.1109/LED.2006.876325

Diamond FET using high-quality polycrystalline diamond with f_T of 45 GHz and f_max of 120 GHz

K. Ueda^*, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

237 Citations (Scopus)

Abstract

Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (∼ 100 μ), field effect transistors (FETs) with gate lengths of 0.1 μ were fabricated. From the RF characteristics, the maximum transition frequency f_T and the maximum frequency of oscillation f_max were ∼ 45 and ∼ 120 GHz, respectively. The f_T and f_max values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a draincurrent density I_DS of 550 mA/mm at gate-source voltage V_GS of 3.5 V and a maximum transconductanceg_m of 143 mS/mm at drain voltage V_DS of - 8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.

Original language	English
Pages (from-to)	570-572
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	7
DOIs	https://doi.org/10.1109/LED.2006.876325
Publication status	Published - 2006 Jul
Externally published	Yes

Keywords

Field effect transistor (FET)
Hydrogen terminated
Polycrystalline diamond
RF performance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.876325

Cite this

@article{d4fd6282e7374338b5f9909515e90dfb,

title = "Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz",

abstract = "Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (∼ 100 μ), field effect transistors (FETs) with gate lengths of 0.1 μ were fabricated. From the RF characteristics, the maximum transition frequency fT and the maximum frequency of oscillation fmax were ∼ 45 and ∼ 120 GHz, respectively. The fT and fmax values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a draincurrent density IDS of 550 mA/mm at gate-source voltage VGS of 3.5 V and a maximum transconductancegm of 143 mS/mm at drain voltage VDS of - 8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.",

keywords = "Field effect transistor (FET), Hydrogen terminated, Polycrystalline diamond, RF performance",

author = "K. Ueda and M. Kasu and Y. Yamauchi and T. Makimoto and M. Schwitters and Twitchen, {D. J.} and Scarsbrook, {G. A.} and Coe, {S. E.}",

note = "Funding Information: Manuscript received February 28, 2006; revised April 14, 2006. This work was supported in part by the Ministry of Internal Affairs and Communications, Japan, under the SCOPE project. The review of this letter was arranged by Editor J. Sin. K. Ueda, M. Kasu, Y. Yamauchi, and T. Makimoto are with NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan. M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe are with Element Six Ltd., SL5 8BP Berkshire, U.K. Digital Object Identifier 10.1109/LED.2006.876325",

year = "2006",

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pages = "570--572",

journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz

AU - Ueda, K.

AU - Kasu, M.

AU - Yamauchi, Y.

AU - Makimoto, T.

AU - Schwitters, M.

AU - Twitchen, D. J.

AU - Scarsbrook, G. A.

AU - Coe, S. E.

N1 - Funding Information: Manuscript received February 28, 2006; revised April 14, 2006. This work was supported in part by the Ministry of Internal Affairs and Communications, Japan, under the SCOPE project. The review of this letter was arranged by Editor J. Sin. K. Ueda, M. Kasu, Y. Yamauchi, and T. Makimoto are with NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan. M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe are with Element Six Ltd., SL5 8BP Berkshire, U.K. Digital Object Identifier 10.1109/LED.2006.876325

PY - 2006/7

Y1 - 2006/7

N2 - Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (∼ 100 μ), field effect transistors (FETs) with gate lengths of 0.1 μ were fabricated. From the RF characteristics, the maximum transition frequency fT and the maximum frequency of oscillation fmax were ∼ 45 and ∼ 120 GHz, respectively. The fT and fmax values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a draincurrent density IDS of 550 mA/mm at gate-source voltage VGS of 3.5 V and a maximum transconductancegm of 143 mS/mm at drain voltage VDS of - 8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.

AB - Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (∼ 100 μ), field effect transistors (FETs) with gate lengths of 0.1 μ were fabricated. From the RF characteristics, the maximum transition frequency fT and the maximum frequency of oscillation fmax were ∼ 45 and ∼ 120 GHz, respectively. The fT and fmax values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a draincurrent density IDS of 550 mA/mm at gate-source voltage VGS of 3.5 V and a maximum transconductancegm of 143 mS/mm at drain voltage VDS of - 8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.

KW - Field effect transistor (FET)

KW - Hydrogen terminated

KW - Polycrystalline diamond

KW - RF performance

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