Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

K. Hirama; H. Takayanagi; S. Yamauchi; Y. Jingu; H. Umezawa; H. Kawarada

doi:10.1109/ISPSD.2007.4294984

Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

K. Hirama^*, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (f_T) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.

Original language	English
Title of host publication	Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Pages	269-272
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2007.4294984
Publication status	Published - 2007 Dec 1
Event	19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of Duration: 2007 May 27 → 2007 May 31

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Country/Territory	Korea, Republic of
City	Jeju Island
Period	07/5/27 → 07/5/31

ASJC Scopus subject areas

Engineering(all)

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10.1109/ISPSD.2007.4294984

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Hirama, K., Takayanagi, H., Yamauchi, S., Jingu, Y., Umezawa, H., & Kawarada, H. (2007). Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. In Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 (pp. 269-272). Article 4294984 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2007.4294984

Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. / Hirama, K.; Takayanagi, H.; Yamauchi, S. et al.
Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07. 2007. p. 269-272 4294984 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirama, K, Takayanagi, H, Yamauchi, S, Jingu, Y, Umezawa, H & Kawarada, H 2007, Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. in Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07., 4294984, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 269-272, 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07, Jeju Island, Korea, Republic of, 07/5/27. https://doi.org/10.1109/ISPSD.2007.4294984

Hirama K, Takayanagi H, Yamauchi S, Jingu Y, Umezawa H, Kawarada H. Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. In Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07. 2007. p. 269-272. 4294984. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2007.4294984

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abstract = "Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.",

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AU - Umezawa, H.

AU - Kawarada, H.

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AB - Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.

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Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

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