Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato; Shingo Sakai; Akihiro Takami; Yoshimichi Ohki; Keisuke Ishii

Dielectric breakdown in F-doped SiO₂ films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato^*, Shingo Sakai, Akihiro Takami, Yoshimichi Ohki, Keisuke Ishii

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF₄, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

Original language	English
Pages	368-371
Number of pages	4
Publication status	Published - 1998 Dec 1
Event	Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden Duration: 1998 Jun 22 → 1998 Jun 25

Other

Other	Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics
City	Vasteras, Sweden
Period	98/6/22 → 98/6/25

ASJC Scopus subject areas

Engineering(all)

Cite this

Dielectric breakdown in F-doped SiO₂ films formed by plasma-enhanced chemical vapor deposition. / Kato, Hiromitsu; Sakai, Shingo; Takami, Akihiro et al.
1998. 368-371 Paper presented at Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics, Vasteras, Sweden.

Research output: Contribution to conference › Paper › peer-review

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title = "Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition",

abstract = "Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.",

author = "Hiromitsu Kato and Shingo Sakai and Akihiro Takami and Yoshimichi Ohki and Keisuke Ishii",

year = "1998",

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AU - Kato, Hiromitsu

AU - Sakai, Shingo

AU - Takami, Akihiro

AU - Ohki, Yoshimichi

AU - Ishii, Keisuke

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

AB - Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

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T2 - Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics

Y2 - 22 June 1998 through 25 June 1998

ER -

Dielectric breakdown in F-doped SiO₂ films formed by plasma-enhanced chemical vapor deposition

Abstract

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ASJC Scopus subject areas

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