Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii; Daisuke Isshiki; Toshifumi Karasawa; Yoshimichi Ohki

Dielectric breakdown of SiO₂ formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii^*, Daisuke Isshiki, Toshifumi Karasawa, Yoshimichi Ohki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The intrinsic breakdown strength of tetraethoxysilane-SiO₂ film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.

Original language	English
Pages	656-660
Number of pages	5
Publication status	Published - 1995 Dec 1
Event	Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics - Leicester, Engl Duration: 1995 Jul 10 → 1995 Jul 13

Other

Other	Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics
City	Leicester, Engl
Period	95/7/10 → 95/7/13

ASJC Scopus subject areas

Engineering(all)

Cite this

Dielectric breakdown of SiO₂ formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Isshiki, Daisuke; Karasawa, Toshifumi et al.
1995. 656-660 Paper presented at Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics, Leicester, Engl.

Research output: Contribution to conference › Paper › peer-review

@conference{c3ccc4defe524dcea1097f52c9026643,

title = "Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane",

abstract = "The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.",

author = "Keisuke Ishii and Daisuke Isshiki and Toshifumi Karasawa and Yoshimichi Ohki",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "656--660",

note = "Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics ; Conference date: 10-07-1995 Through 13-07-1995",

}

TY - CONF

T1 - Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

AU - Ishii, Keisuke

AU - Isshiki, Daisuke

AU - Karasawa, Toshifumi

AU - Ohki, Yoshimichi

PY - 1995/12/1

Y1 - 1995/12/1

N2 - The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.

AB - The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029540456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029540456&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029540456

SP - 656

EP - 660

T2 - Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics

Y2 - 10 July 1995 through 13 July 1995

ER -

Dielectric breakdown of SiO₂ formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this