Difference of secondary defect formation by high energy B + and Al + implantation into 4H-SiC

Toshiyuki Ohno*, Naoto Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The difference of secondary defect formation between high-energy B + and Al + implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al + implanted layers is higher than that in the B + implanted layers and the mean defect size in the B + implanted layers is larger than that in the Al + implanted layers. These secondary defects are formed by agglomeration of self-interstitials and the amount of interstitials stored in the defects roughly coincides with that of implanted ions. This correlation does not depend on the ion species. The activation energies of secondary defect formation are not significantly different for B + and Al + implanted layers. B + and Al + implanted layers have different agglomerations of interstitials, which cause the differences of defect size and density. The difference does not originate from the self-diffusion of interstitials in implanted layers but is probably due to the initial nucleation of defects.

Original languageEnglish
Pages (from-to)4136-4142
Number of pages7
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2002 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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