Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

T. Henkel; Y. Tanaka; Naoto Kobayashi; H. Tanoue; S. Hishita

doi:10.1063/1.1335850

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

T. Henkel^*, Y. Tanaka, Naoto Kobayashi, H. Tanoue, S. Hishita

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300°C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700°C. Beryllium is suggested to diffuse via interstitial sites.

Original language	English
Pages (from-to)	231-233
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	2
DOIs	https://doi.org/10.1063/1.1335850
Publication status	Published - 2001 Jan 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry",

abstract = "The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300°C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700°C. Beryllium is suggested to diffuse via interstitial sites.",

author = "T. Henkel and Y. Tanaka and Naoto Kobayashi and H. Tanoue and S. Hishita",

year = "2001",

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T1 - Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

AU - Henkel, T.

AU - Tanaka, Y.

AU - Kobayashi, Naoto

AU - Tanoue, H.

AU - Hishita, S.

PY - 2001/1/8

Y1 - 2001/1/8

N2 - The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300°C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700°C. Beryllium is suggested to diffuse via interstitial sites.

AB - The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300°C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700°C. Beryllium is suggested to diffuse via interstitial sites.

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EP - 233

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

Abstract

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