TY - JOUR
T1 - Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique
AU - Wada, M.
AU - Sakakibara, K.
AU - Umezawa, T.
AU - Nakajima, S.
AU - Araki, S.
AU - Kudou, T.
AU - Ueda, T.
PY - 2000
Y1 - 2000
N2 - A new technique of zinc diffusion into InP, InAsP and InGaAs by metal-organic vapor-phase diffusion, whereby a low-pressure metal-organic vapor-phase epitaxy with dimethylzinc and phosphine is utilized as an open tube diffusion system, is described. This technique allows the diffusion depth to be precisely controlled in the submicrometer range, is easy to scale up, and gives highly reproducible results. Results on the concentration dependence of the zinc diffusion coefficient, the activation of zinc acceptors by annealing obtained from the diffusion profiles as well as the change of zinc incorporation near the surface under various diffusion conditions are presented.
AB - A new technique of zinc diffusion into InP, InAsP and InGaAs by metal-organic vapor-phase diffusion, whereby a low-pressure metal-organic vapor-phase epitaxy with dimethylzinc and phosphine is utilized as an open tube diffusion system, is described. This technique allows the diffusion depth to be precisely controlled in the submicrometer range, is easy to scale up, and gives highly reproducible results. Results on the concentration dependence of the zinc diffusion coefficient, the activation of zinc acceptors by annealing obtained from the diffusion profiles as well as the change of zinc incorporation near the surface under various diffusion conditions are presented.
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M3 - Article
AN - SCOPUS:0033713878
SN - 1012-0386
VL - 183
SP - 153
EP - 162
JO - Diffusion and Defect Data. Pt A Defect and Diffusion Forum
JF - Diffusion and Defect Data. Pt A Defect and Diffusion Forum
ER -