Diffusion profiles of Se in bulk ZnTe

M. Kobayashi; H. Terakado; R. Sawada; A. Arakawa; K. Sato

doi:10.1002/1521-3951(200201)229:1<265::AID-PSSB265>3.0.CO;2-K

Diffusion profiles of Se in bulk ZnTe

M. Kobayashi^*, H. Terakado, R. Sawada, A. Arakawa, K. Sato

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H₂ carrier gas have resulted in the degradation of the bulk ZnTe region.

Original language	English
Pages (from-to)	265-268
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200201)229:1<265::AID-PSSB265>3.0.CO;2-K
Publication status	Published - 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AU - Kobayashi, M.

AU - Terakado, H.

AU - Sawada, R.

AU - Arakawa, A.

AU - Sato, K.

PY - 2002

Y1 - 2002

N2 - Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

AB - Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

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Diffusion profiles of Se in bulk ZnTe

Abstract

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