Direct bonding of SiC by the suface activated bonding method

Tadatomo Suga; Fengwen Mu; Masahisa Fujino; Yoshikazu Takahashi; Haruo Nakazawa; Kenichi Iguchi

doi:10.1109/ICEP.2014.6826707

Direct bonding of SiC by the suface activated bonding method

Tadatomo Suga, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.

Original language	English
Title of host publication	2014 International Conference on Electronics Packaging, ICEP 2014
Publisher	IEEE Computer Society
Pages	341-344
Number of pages	4
ISBN (Print)	9784904090107
DOIs	https://doi.org/10.1109/ICEP.2014.6826707
Publication status	Published - 2014 Jan 1
Externally published	Yes
Event	2014 International Conference on Electronics Packaging, ICEP 2014 - Toyama, Japan Duration: 2014 Apr 23 → 2014 Apr 25

Publication series

Name	2014 International Conference on Electronics Packaging, ICEP 2014

Conference

Conference	2014 International Conference on Electronics Packaging, ICEP 2014
Country/Territory	Japan
City	Toyama
Period	14/4/23 → 14/4/25

Keywords

4H-sic
Bonding strength
Interface
Modified sab method
Room temperature bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICEP.2014.6826707

Cite this

Direct bonding of SiC by the suface activated bonding method. / Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa et al.
2014 International Conference on Electronics Packaging, ICEP 2014. IEEE Computer Society, 2014. p. 341-344 6826707 (2014 International Conference on Electronics Packaging, ICEP 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suga, T, Mu, F, Fujino, M, Takahashi, Y, Nakazawa, H & Iguchi, K 2014, Direct bonding of SiC by the suface activated bonding method. in 2014 International Conference on Electronics Packaging, ICEP 2014., 6826707, 2014 International Conference on Electronics Packaging, ICEP 2014, IEEE Computer Society, pp. 341-344, 2014 International Conference on Electronics Packaging, ICEP 2014, Toyama, Japan, 14/4/23. https://doi.org/10.1109/ICEP.2014.6826707

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title = "Direct bonding of SiC by the suface activated bonding method",

abstract = "3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.",

keywords = "4H-sic, Bonding strength, Interface, Modified sab method, Room temperature bonding",

author = "Tadatomo Suga and Fengwen Mu and Masahisa Fujino and Yoshikazu Takahashi and Haruo Nakazawa and Kenichi Iguchi",

year = "2014",

month = jan,

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doi = "10.1109/ICEP.2014.6826707",

language = "English",

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series = "2014 International Conference on Electronics Packaging, ICEP 2014",

publisher = "IEEE Computer Society",

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note = "2014 International Conference on Electronics Packaging, ICEP 2014 ; Conference date: 23-04-2014 Through 25-04-2014",

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AU - Suga, Tadatomo

AU - Mu, Fengwen

AU - Fujino, Masahisa

AU - Takahashi, Yoshikazu

AU - Nakazawa, Haruo

AU - Iguchi, Kenichi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - 3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.

AB - 3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.

KW - 4H-sic

KW - Bonding strength

KW - Interface

KW - Modified sab method

KW - Room temperature bonding

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BT - 2014 International Conference on Electronics Packaging, ICEP 2014

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ER -

Direct bonding of SiC by the suface activated bonding method

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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