DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

S. Ichimura; M. Hirata; H. Tanino; N. Atoda; M. Ono; K. Hoh

doi:10.1116/1.582636

DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

S. Ichimura^*, M. Hirata, H. Tanino, N. Atoda, M. Ono, K. Hoh

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

Original language	English
Pages (from-to)	1076-1079
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	4
DOIs	https://doi.org/10.1116/1.582636
Publication status	Published - 1983
Externally published	Yes
Event	Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA Duration: 1983 May 31 → 1983 Jun 3

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582636

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title = "DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.",

abstract = "Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.",

author = "S. Ichimura and M. Hirata and H. Tanino and N. Atoda and M. Ono and K. Hoh",

year = "1983",

doi = "10.1116/1.582636",

language = "English",

volume = "1",

pages = "1076--1079",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

number = "4",

note = "Proc of the Int Symp on Electron, Ion, and Photon Beams ; Conference date: 31-05-1983 Through 03-06-1983",

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T1 - DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

AU - Ichimura, S.

AU - Hirata, M.

AU - Tanino, H.

AU - Atoda, N.

AU - Ono, M.

AU - Hoh, K.

PY - 1983

Y1 - 1983

N2 - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

AB - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

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DO - 10.1116/1.582636

M3 - Conference article

AN - SCOPUS:0020832282

SN - 0734-211X

VL - 1

SP - 1076

EP - 1079

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proc of the Int Symp on Electron, Ion, and Photon Beams

Y2 - 31 May 1983 through 3 June 1983

ER -

DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

Abstract

ASJC Scopus subject areas

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