Direct etching process using focused ion beam for microfabrication of crosslinked PTFE

Nozomi Miyoshi; Yoshinori Matsui; Akihiro Oshima; Shu Seki; Katsuyoshi Murata; Etsuko Kato; Seiichi Tagawa; Masakazu Washio

Direct etching process using focused ion beam for microfabrication of crosslinked PTFE

Nozomi Miyoshi^*, Yoshinori Matsui, Akihiro Oshima, Shu Seki, Katsuyoshi Murata, Etsuko Kato, Seiichi Tagawa, Masakazu Washio

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Micro structures of polytetrafluoroethylene (PTFE) and crosslinked PTFE (RX-PTFE), which has remarkable thermal stability, chemical stability and electrical insulation, have been processed by focused ion beam (FIB). Fine structures of radiation crosslinked PTFE (RX-PTFE),with the size of several tens of μm, have been fabricated by FIB maskless direct etching. PTFE and RX-PTFE with various crosslinking densities, which were controlled from 0.23 % to 1.2 %, were irradiated by 30 keV/ 2.9-12 nA Ga⁺ ion beam with the fluence of 0.3 × 10¹⁶ - 4.5 × 10¹⁶ ions/cm ². It was found that the etching rate of PTFE and RX-PTFE was approximately 10^-15 μm/(ion/cm²).

Original language	English
Pages	3314-3315
Number of pages	2
Publication status	Published - 2006 Dec 1
Event	55th Society of Polymer Science Japan Symposium on Macromolecules - Toyama, Japan Duration: 2006 Sept 20 → 2006 Sept 22

Other

Other	55th Society of Polymer Science Japan Symposium on Macromolecules
Country/Territory	Japan
City	Toyama
Period	06/9/20 → 06/9/22

Keywords

Etching
Etching rate
Focused ion beam
PTFE

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{a07a996c810845f6ab7c0d587cb9045a,

title = "Direct etching process using focused ion beam for microfabrication of crosslinked PTFE",

abstract = "Micro structures of polytetrafluoroethylene (PTFE) and crosslinked PTFE (RX-PTFE), which has remarkable thermal stability, chemical stability and electrical insulation, have been processed by focused ion beam (FIB). Fine structures of radiation crosslinked PTFE (RX-PTFE),with the size of several tens of μm, have been fabricated by FIB maskless direct etching. PTFE and RX-PTFE with various crosslinking densities, which were controlled from 0.23 % to 1.2 %, were irradiated by 30 keV/ 2.9-12 nA Ga+ ion beam with the fluence of 0.3 × 1016 - 4.5 × 1016 ions/cm 2. It was found that the etching rate of PTFE and RX-PTFE was approximately 10-15 μm/(ion/cm2).",

keywords = "Etching, Etching rate, Focused ion beam, PTFE",

author = "Nozomi Miyoshi and Yoshinori Matsui and Akihiro Oshima and Shu Seki and Katsuyoshi Murata and Etsuko Kato and Seiichi Tagawa and Masakazu Washio",

year = "2006",

month = dec,

day = "1",

language = "English",

pages = "3314--3315",

note = "55th Society of Polymer Science Japan Symposium on Macromolecules ; Conference date: 20-09-2006 Through 22-09-2006",

}

TY - CONF

T1 - Direct etching process using focused ion beam for microfabrication of crosslinked PTFE

AU - Miyoshi, Nozomi

AU - Matsui, Yoshinori

AU - Oshima, Akihiro

AU - Seki, Shu

AU - Murata, Katsuyoshi

AU - Kato, Etsuko

AU - Tagawa, Seiichi

AU - Washio, Masakazu

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Micro structures of polytetrafluoroethylene (PTFE) and crosslinked PTFE (RX-PTFE), which has remarkable thermal stability, chemical stability and electrical insulation, have been processed by focused ion beam (FIB). Fine structures of radiation crosslinked PTFE (RX-PTFE),with the size of several tens of μm, have been fabricated by FIB maskless direct etching. PTFE and RX-PTFE with various crosslinking densities, which were controlled from 0.23 % to 1.2 %, were irradiated by 30 keV/ 2.9-12 nA Ga+ ion beam with the fluence of 0.3 × 1016 - 4.5 × 1016 ions/cm 2. It was found that the etching rate of PTFE and RX-PTFE was approximately 10-15 μm/(ion/cm2).

AB - Micro structures of polytetrafluoroethylene (PTFE) and crosslinked PTFE (RX-PTFE), which has remarkable thermal stability, chemical stability and electrical insulation, have been processed by focused ion beam (FIB). Fine structures of radiation crosslinked PTFE (RX-PTFE),with the size of several tens of μm, have been fabricated by FIB maskless direct etching. PTFE and RX-PTFE with various crosslinking densities, which were controlled from 0.23 % to 1.2 %, were irradiated by 30 keV/ 2.9-12 nA Ga+ ion beam with the fluence of 0.3 × 1016 - 4.5 × 1016 ions/cm 2. It was found that the etching rate of PTFE and RX-PTFE was approximately 10-15 μm/(ion/cm2).

KW - Etching

KW - Etching rate

KW - Focused ion beam

KW - PTFE

UR - http://www.scopus.com/inward/record.url?scp=33846135039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846135039&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33846135039

SP - 3314

EP - 3315

T2 - 55th Society of Polymer Science Japan Symposium on Macromolecules

Y2 - 20 September 2006 through 22 September 2006

ER -

Direct etching process using focused ion beam for microfabrication of crosslinked PTFE

Abstract

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Keywords

ASJC Scopus subject areas

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