The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 1013 cm- 2 and ∼ 670 cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.
- Higherature annealing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering