Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst

K. Ueda; S. Aichi; H. Asano

doi:10.1016/j.diamond.2015.10.021

Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst

K. Ueda^*, S. Aichi, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 10¹³ cm^{- 2} and ∼ 670 cm²/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.

Original language	English
Pages (from-to)	148-152
Number of pages	5
Journal	Diamond and Related Materials
Volume	63
DOIs	https://doi.org/10.1016/j.diamond.2015.10.021
Publication status	Published - 2016 Mar 1
Externally published	Yes

Keywords

Diamond
Graphene
Higherature annealing
Mobility
Raman

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2015.10.021

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title = "Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst",

abstract = "The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 1013 cm- 2 and ∼ 670 cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.",

keywords = "Diamond, Graphene, Higherature annealing, Mobility, Raman",

author = "K. Ueda and S. Aichi and H. Asano",

note = "Funding Information: This work was partly supported by JSPS KAKENHI (Grant numbers: 24560372 and 15K13335 ), by the Kurata Memorial Hitachi Science and Technology Foundation , and by research scholarship of Itochu Foundation . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2016",

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day = "1",

doi = "10.1016/j.diamond.2015.10.021",

language = "English",

volume = "63",

pages = "148--152",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst

AU - Ueda, K.

AU - Aichi, S.

AU - Asano, H.

N1 - Funding Information: This work was partly supported by JSPS KAKENHI (Grant numbers: 24560372 and 15K13335 ), by the Kurata Memorial Hitachi Science and Technology Foundation , and by research scholarship of Itochu Foundation . Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 1013 cm- 2 and ∼ 670 cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.

AB - The formation of high-quality graphene layers on diamond was achieved based on a higherature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ∼ 1013 cm- 2 and ∼ 670 cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.

KW - Diamond

KW - Graphene

KW - Higherature annealing

KW - Mobility

KW - Raman

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UR - http://www.scopus.com/inward/citedby.url?scp=84959330710&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2015.10.021

DO - 10.1016/j.diamond.2015.10.021

M3 - Article

AN - SCOPUS:84959330710

SN - 0925-9635

VL - 63

SP - 148

EP - 152

JO - Diamond and Related Materials

JF - Diamond and Related Materials

ER -

Direct formation of graphene layers on diamond by higherature annealing with a Cu catalyst

Abstract

Keywords

ASJC Scopus subject areas

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