Discovery of the deep level related to hydrogen in anatase TiO2

Takahira Miyagi*, Masayuki Kamei, Takefumi Mitsuhashi, Atsushi Yamazaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.

Original languageEnglish
Article number132101
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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