Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Nobuya Mori*, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

Original languageEnglish
Article number04CJ04
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array'. Together they form a unique fingerprint.

Cite this