Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Nobuya Mori; Masanori Tomita; Hideki Minari; Takanobu Watanabe; Nobuyoshi Koshida

doi:10.7567/JJAP.52.04CJ04

Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Nobuya Mori^*, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

Original language	English
Article number	04CJ04
Journal	Japanese journal of applied physics
Volume	52
Issue number	4 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.04CJ04
Publication status	Published - 2013 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array",

abstract = "Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.",

author = "Nobuya Mori and Masanori Tomita and Hideki Minari and Takanobu Watanabe and Nobuyoshi Koshida",

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AU - Watanabe, Takanobu

AU - Koshida, Nobuyoshi

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AB - Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

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Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Abstract

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