Dopant profile engineering of CMOS devices formed by non-melt laser spike annealing

Akio Shima*, Yun Wang, Deepak Upadhyaya, Lucia Feng, Somit Talwar, Atsushi Hiraiwa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)


We optimized the halo profile and deep source/drain junction profile of the devices that were fabricated by non-melt laser spike annealing (LSA). The optimized devices achieved 10%- and 20%-better performance compared to those by the conventional LSA and rapid thermal annealing (RTA), respectively. The hot carrier degradation was also reduced to an RTA-comparable level by the halo optimization. From these results we concluded that the dopant profile engineering specific to LSA is a key to obtaining good device performance and that the devices by the optimized LSA process are the most promising for hp65-node and beyond.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Number of pages2
Publication statusPublished - 2005
Externally publishedYes
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14


Other2005 Symposium on VLSI Technology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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