TY - JOUR
T1 - Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy
AU - Kimura, R.
AU - Dosho, S.
AU - Imai, A.
AU - Kobayashi, M.
AU - Konagai, M.
AU - Takahashi, K.
N1 - Funding Information:
The authors are grateful to the members of HVEM Laboratory of the Tokyo Institute of Technology for helpful guidance, discussion and the operation of the electron microscope. This work is supported in part by the special coordination of the Science and Technology Agency of Japanese Government.
PY - 1987/8/11
Y1 - 1987/8/11
N2 - In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).
AB - In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).
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U2 - 10.1117/12.940827
DO - 10.1117/12.940827
M3 - Article
AN - SCOPUS:84950828520
SN - 0277-786X
VL - 792
SP - 112
EP - 116
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
ER -