Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Satoshi Oikawa*, Tetsuya Kawanishi, Kaoru Higuma, Yoshiro Matsuo, Masayuki Izutsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number2
Publication statusPublished - 2003 Feb
Externally publishedYes


  • Electrode
  • Halfwave voltage
  • LiNbO
  • Optical modulator
  • Resonance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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