Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Satoshi Oikawa; Tetsuya Kawanishi; Kaoru Higuma; Yoshiro Matsuo; Masayuki Izutsu

doi:10.1109/LPT.2002.806102

Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Satoshi Oikawa^*, Tetsuya Kawanishi, Kaoru Higuma, Yoshiro Matsuo, Masayuki Izutsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We propose a resonant-type LiNbO₃ optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

Original language	English
Pages (from-to)	221-223
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	15
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2002.806102
Publication status	Published - 2003 Feb
Externally published	Yes

Keywords

Electrode
Halfwave voltage
LiNbO
Optical modulator
Resonance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2002.806102

Cite this

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title = "Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode",

abstract = "We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.",

keywords = "Electrode, Halfwave voltage, LiNbO, Optical modulator, Resonance",

author = "Satoshi Oikawa and Tetsuya Kawanishi and Kaoru Higuma and Yoshiro Matsuo and Masayuki Izutsu",

year = "2003",

month = feb,

doi = "10.1109/LPT.2002.806102",

language = "English",

volume = "15",

pages = "221--223",

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issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

AU - Oikawa, Satoshi

AU - Kawanishi, Tetsuya

AU - Higuma, Kaoru

AU - Matsuo, Yoshiro

AU - Izutsu, Masayuki

PY - 2003/2

Y1 - 2003/2

N2 - We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

AB - We propose a resonant-type LiNbO3 optical modulator with low halfwave voltage. We optimize the phase constant of the electric wave with thick electrodes to reduce the halfwave voltage. The halfwave voltage of the fabricated modulator with 20-μm-thick electrodes is 5.8 V at 10.6 GHz.

KW - Electrode

KW - Halfwave voltage

KW - LiNbO

KW - Optical modulator

KW - Resonance

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U2 - 10.1109/LPT.2002.806102

DO - 10.1109/LPT.2002.806102

M3 - Article

AN - SCOPUS:0037320539

SN - 1041-1135

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SP - 221

EP - 223

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Double-stub structure for resonant-type optical modulators using 20-μm-thick electrode

Abstract

Keywords

ASJC Scopus subject areas

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