TY - JOUR
T1 - Drastic improvement in wettability of 6,13-bis(triisopropylsilylethynyl) pentacene by addition of silica nanoparticles for solution-processable organic field-effect transistors
AU - Yamazaki, Saori
AU - Hamada, Takashi
AU - Nagase, Takashi
AU - Tokai, Sakae
AU - Yoshikawa, Masashi
AU - Kobayashi, Takashi
AU - Michiwaki, Yoshiki
AU - Watase, Seiji
AU - Watanabe, Mitsuru
AU - Matsukawa, Kimihiro
AU - Naito, Hiroyoshi
PY - 2010/9
Y1 - 2010/9
N2 - It is essential to control the wettability of soluble organic semiconductors on polymer gate dielectrics to realize low-cost, flexible, and large-area electronic circuits employing organic field-effect transistors using solution processes. We find that the addition of a small amount of silica nanoparticles (SNPs) drastically improves the wettability of the soluble organic semiconductor of 6,13-bis(triisopropylsilylethynyl)pentacene onto the hydrophobic polymer gate dielectric of poly(methylsilsesquioxane) in the spin-coating process. The improvement in wettability by the addition of SNPs is also demonstrated in the ink-jet printing process, which allows the direct patterning of soluble organic semiconductors on polymer gate dielectrics.
AB - It is essential to control the wettability of soluble organic semiconductors on polymer gate dielectrics to realize low-cost, flexible, and large-area electronic circuits employing organic field-effect transistors using solution processes. We find that the addition of a small amount of silica nanoparticles (SNPs) drastically improves the wettability of the soluble organic semiconductor of 6,13-bis(triisopropylsilylethynyl)pentacene onto the hydrophobic polymer gate dielectric of poly(methylsilsesquioxane) in the spin-coating process. The improvement in wettability by the addition of SNPs is also demonstrated in the ink-jet printing process, which allows the direct patterning of soluble organic semiconductors on polymer gate dielectrics.
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U2 - 10.1143/APEX.3.091602
DO - 10.1143/APEX.3.091602
M3 - Article
AN - SCOPUS:77956757483
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 091602
ER -