Dynamic observation of Si (111) surface using a fast scanning tunneling microscope

Sumio Hosaka; Tsuyoshi Hasegawa; Shigeyuki Hosoki; Keiji Takata

doi:10.1063/1.103965

Dynamic observation of Si (111) surface using a fast scanning tunneling microscope

Sumio Hosaka^*, Tsuyoshi Hasegawa, Shigeyuki Hosoki, Keiji Takata

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Atomic structures of a Si (111) surface are dynamically observed at a 2 s/frame velocity over a scanning field about 150 Å×150 Å using a fast scanning tunneling microscope (FSTM). A FSTM has been developed and it features a compensation method for probe tip servo position error in the constant current mode. The compensation value is derived from the ratio of tunnel current fluctuation and tunnel current (Δ I/I) in differential-type tunnel current equation. The FSTM provides first dynamic observation of a residual gas molecule adsorption on atomic defects in 7×7 Si adatom reconstructions using a video tape recorder. In addition, a thermal drift of about 10 Å /s, about 30 min after direct electric flash heating of the sample for Si surface cleaning, can be easily observed.

Original language	English
Pages (from-to)	138-140
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	2
DOIs	https://doi.org/10.1063/1.103965
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103965

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title = "Dynamic observation of Si (111) surface using a fast scanning tunneling microscope",

abstract = "Atomic structures of a Si (111) surface are dynamically observed at a 2 s/frame velocity over a scanning field about 150 {\AA}×150 {\AA} using a fast scanning tunneling microscope (FSTM). A FSTM has been developed and it features a compensation method for probe tip servo position error in the constant current mode. The compensation value is derived from the ratio of tunnel current fluctuation and tunnel current (Δ I/I) in differential-type tunnel current equation. The FSTM provides first dynamic observation of a residual gas molecule adsorption on atomic defects in 7×7 Si adatom reconstructions using a video tape recorder. In addition, a thermal drift of about 10 {\AA} /s, about 30 min after direct electric flash heating of the sample for Si surface cleaning, can be easily observed.",

author = "Sumio Hosaka and Tsuyoshi Hasegawa and Shigeyuki Hosoki and Keiji Takata",

year = "1990",

doi = "10.1063/1.103965",

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journal = "Applied Physics Letters",

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T1 - Dynamic observation of Si (111) surface using a fast scanning tunneling microscope

AU - Hosaka, Sumio

AU - Hasegawa, Tsuyoshi

AU - Hosoki, Shigeyuki

AU - Takata, Keiji

PY - 1990

Y1 - 1990

N2 - Atomic structures of a Si (111) surface are dynamically observed at a 2 s/frame velocity over a scanning field about 150 Å×150 Å using a fast scanning tunneling microscope (FSTM). A FSTM has been developed and it features a compensation method for probe tip servo position error in the constant current mode. The compensation value is derived from the ratio of tunnel current fluctuation and tunnel current (Δ I/I) in differential-type tunnel current equation. The FSTM provides first dynamic observation of a residual gas molecule adsorption on atomic defects in 7×7 Si adatom reconstructions using a video tape recorder. In addition, a thermal drift of about 10 Å /s, about 30 min after direct electric flash heating of the sample for Si surface cleaning, can be easily observed.

AB - Atomic structures of a Si (111) surface are dynamically observed at a 2 s/frame velocity over a scanning field about 150 Å×150 Å using a fast scanning tunneling microscope (FSTM). A FSTM has been developed and it features a compensation method for probe tip servo position error in the constant current mode. The compensation value is derived from the ratio of tunnel current fluctuation and tunnel current (Δ I/I) in differential-type tunnel current equation. The FSTM provides first dynamic observation of a residual gas molecule adsorption on atomic defects in 7×7 Si adatom reconstructions using a video tape recorder. In addition, a thermal drift of about 10 Å /s, about 30 min after direct electric flash heating of the sample for Si surface cleaning, can be easily observed.

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Dynamic observation of Si (111) surface using a fast scanning tunneling microscope

Abstract

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