Abstract
The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350°C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112] steps became jagged with [112] steps. At the [112] steps, new adatoms appeared in rows along the step edges.
| Original language | English |
|---|---|
| Pages (from-to) | 1943-1946 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 48 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics