Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama; Y. Nishida; H. Oda; T. Oishi; S. Shimizu; T. Kunikiyo; K. Sonoda; Y. Inoue; M. Inuishi

Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama^*, Y. Nishida, H. Oda, T. Oishi, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue, M. Inuishi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

36 Citations (Scopus)

Abstract

A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

Original language	English
Pages (from-to)	657-660
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{04771182f5424fc8b70d80b1af4c2a1d,

title = "Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length",

abstract = "A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.",

author = "H. Sayama and Y. Nishida and H. Oda and T. Oishi and S. Shimizu and T. Kunikiyo and K. Sonoda and Y. Inoue and M. Inuishi",

year = "1999",

language = "English",

pages = "657--660",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

AU - Sayama, H.

AU - Nishida, Y.

AU - Oda, H.

AU - Oishi, T.

AU - Shimizu, S.

AU - Kunikiyo, T.

AU - Sonoda, K.

AU - Inoue, Y.

AU - Inuishi, M.

PY - 1999

Y1 - 1999

N2 - A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

AB - A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

UR - http://www.scopus.com/inward/record.url?scp=0033312235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033312235&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033312235

SN - 0163-1918

SP - 657

EP - 660

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this