Effect of base pressure on the structure and magnetic properties of FePt thin films

Anjana Asthana; Y. K. Takahashi; Yoshio Matsui; K. Hono

doi:10.1016/j.jmmm.2007.05.027

Effect of base pressure on the structure and magnetic properties of FePt thin films

Anjana Asthana^*, Y. K. Takahashi, Yoshio Matsui, K. Hono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the effect of base pressure of the sputtering chamber on the structure and magnetic properties of the FePt thin films. The A1-FePt thin films deposited at room temperature, at a low base pressure of 5.5×10^-7 Torr was ordered to the L1₀ structure at a low annealing temperature of 200 °C and a highly ordered L1₀ phase was formed by annealing the film at 300 °C. On the other hand, for the A1-FePt thin films deposited at a higher base pressure of 5.5×10^-5 Torr, the ordering to the L1₀ structure took place at a higher annealing temperature of 400 °C and a fully ordered L1₀ phase was obtained when the film was annealed at 600 °C. These observations suggest that the low base pressure of the sputtering chamber is effective to reduce the kinetic ordering temperature to a much lower annealing temperature of 200 °C.

Original language	English
Pages (from-to)	250-256
Number of pages	7
Journal	Journal of Magnetism and Magnetic Materials
Volume	320
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jmmm.2007.05.027
Publication status	Published - 2008 Feb
Externally published	Yes

Keywords

Base pressure
Fe Pt
Grain size
Microstructure
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2007.05.027

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title = "Effect of base pressure on the structure and magnetic properties of FePt thin films",

abstract = "We have investigated the effect of base pressure of the sputtering chamber on the structure and magnetic properties of the FePt thin films. The A1-FePt thin films deposited at room temperature, at a low base pressure of 5.5×10-7 Torr was ordered to the L10 structure at a low annealing temperature of 200 °C and a highly ordered L10 phase was formed by annealing the film at 300 °C. On the other hand, for the A1-FePt thin films deposited at a higher base pressure of 5.5×10-5 Torr, the ordering to the L10 structure took place at a higher annealing temperature of 400 °C and a fully ordered L10 phase was obtained when the film was annealed at 600 °C. These observations suggest that the low base pressure of the sputtering chamber is effective to reduce the kinetic ordering temperature to a much lower annealing temperature of 200 °C.",

keywords = "Base pressure, Fe Pt, Grain size, Microstructure, Thin film",

author = "Anjana Asthana and Takahashi, {Y. K.} and Yoshio Matsui and K. Hono",

year = "2008",

month = feb,

doi = "10.1016/j.jmmm.2007.05.027",

language = "English",

volume = "320",

pages = "250--256",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Effect of base pressure on the structure and magnetic properties of FePt thin films

AU - Asthana, Anjana

AU - Takahashi, Y. K.

AU - Matsui, Yoshio

AU - Hono, K.

PY - 2008/2

Y1 - 2008/2

N2 - We have investigated the effect of base pressure of the sputtering chamber on the structure and magnetic properties of the FePt thin films. The A1-FePt thin films deposited at room temperature, at a low base pressure of 5.5×10-7 Torr was ordered to the L10 structure at a low annealing temperature of 200 °C and a highly ordered L10 phase was formed by annealing the film at 300 °C. On the other hand, for the A1-FePt thin films deposited at a higher base pressure of 5.5×10-5 Torr, the ordering to the L10 structure took place at a higher annealing temperature of 400 °C and a fully ordered L10 phase was obtained when the film was annealed at 600 °C. These observations suggest that the low base pressure of the sputtering chamber is effective to reduce the kinetic ordering temperature to a much lower annealing temperature of 200 °C.

AB - We have investigated the effect of base pressure of the sputtering chamber on the structure and magnetic properties of the FePt thin films. The A1-FePt thin films deposited at room temperature, at a low base pressure of 5.5×10-7 Torr was ordered to the L10 structure at a low annealing temperature of 200 °C and a highly ordered L10 phase was formed by annealing the film at 300 °C. On the other hand, for the A1-FePt thin films deposited at a higher base pressure of 5.5×10-5 Torr, the ordering to the L10 structure took place at a higher annealing temperature of 400 °C and a fully ordered L10 phase was obtained when the film was annealed at 600 °C. These observations suggest that the low base pressure of the sputtering chamber is effective to reduce the kinetic ordering temperature to a much lower annealing temperature of 200 °C.

KW - Base pressure

KW - Fe Pt

KW - Grain size

KW - Microstructure

KW - Thin film

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DO - 10.1016/j.jmmm.2007.05.027

M3 - Article

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SN - 0304-8853

VL - 320

SP - 250

EP - 256

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 3-4

ER -

Effect of base pressure on the structure and magnetic properties of FePt thin films

Abstract

Keywords

ASJC Scopus subject areas

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