Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors

Toshikatsu Sakai; Yuta Araki; Hirofumi Kanazawa; Hitoshi Umezawa; Minoru Tachiki; Hiroshi Kawarada

doi:10.1143/JJAP.41.2595

Effect of Cl^- ionic solutions on electrolyte-solution-gate diamond field-effect transistors

Toshikatsu Sakai^*, Yuta Araki, Hirofumi Kanazawa, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I _ds-V_gs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl^- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl^- ions. This sensitivity of the FET to Cl^- ion's concrentration is observed in the 10^-110^-6M range of potassium chloride (KC1) solutions

Original language	English
Pages (from-to)	2595-2597
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.41.2595
Publication status	Published - 2002 Apr

Keywords

Cl ion
Diamond
Electrolyte solution
Hydrogen termination
ISFET
Polycrystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.41.2595

Cite this

@article{185b357c2afe4f6889a2bcba068f2b4e,

title = "Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors",

abstract = "Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I ds-Vgs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl- ions. This sensitivity of the FET to Cl- ion's concrentration is observed in the 10-110-6M range of potassium chloride (KC1) solutions",

keywords = "Cl ion, Diamond, Electrolyte solution, Hydrogen termination, ISFET, Polycrystal",

author = "Toshikatsu Sakai and Yuta Araki and Hirofumi Kanazawa and Hitoshi Umezawa and Minoru Tachiki and Hiroshi Kawarada",

year = "2002",

month = apr,

doi = "10.1143/JJAP.41.2595",

language = "English",

volume = "41",

pages = "2595--2597",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors

AU - Sakai, Toshikatsu

AU - Araki, Yuta

AU - Kanazawa, Hirofumi

AU - Umezawa, Hitoshi

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

PY - 2002/4

Y1 - 2002/4

N2 - Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I ds-Vgs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl- ions. This sensitivity of the FET to Cl- ion's concrentration is observed in the 10-110-6M range of potassium chloride (KC1) solutions

AB - Diamond field-effect transistors (FETs) operate in electrolyte solutions having a wide pH range of 1-13. The FETs have been fabricated using a p-type surface conductive layer, where the diamond surface is exposed directly to the electrolyte solutions. From the drain current-gate voltage (I ds-Vgs) characteristics of the FETs, it appears that the threshold voltages of the FETs are independent of the pH value of the solution. In Cl- ionic solutions, however, the threshold voltages shift approximately 30 mV with a one-order-of-magnitude change of molar concentration of Cl- ions. This sensitivity of the FET to Cl- ion's concrentration is observed in the 10-110-6M range of potassium chloride (KC1) solutions

KW - Cl ion

KW - Diamond

KW - Electrolyte solution

KW - Hydrogen termination

KW - ISFET

KW - Polycrystal

UR - http://www.scopus.com/inward/record.url?scp=0141979069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141979069&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.2595

DO - 10.1143/JJAP.41.2595

M3 - Article

AN - SCOPUS:0141979069

SN - 0021-4922

VL - 41

SP - 2595

EP - 2597

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -