Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Hisashi Fukuda; Tomo Ueno; Hiroshi Kawarada; Iwao Ohdomari

doi:10.1143/JJAP.32.L569

Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Hisashi Fukuda, Tomo Ueno, Hiroshi Kawarada, Iwao Ohdomari

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.

Original language	English
Pages (from-to)	569-571
Number of pages	3
Journal	Japanese journal of applied physics
Volume	32
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.32.L569
Publication status	Published - 1993 Apr

Keywords

Electron spin resonance
Si02/Si interface
Silicon
Thin insulator film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.32.L569

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title = "Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films",

abstract = "Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.",

keywords = "Electron spin resonance, Si02/Si interface, Silicon, Thin insulator film",

author = "Hisashi Fukuda and Tomo Ueno and Hiroshi Kawarada and Iwao Ohdomari",

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TY - JOUR

T1 - Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

AU - Fukuda, Hisashi

AU - Ueno, Tomo

AU - Kawarada, Hiroshi

AU - Ohdomari, Iwao

PY - 1993/4

Y1 - 1993/4

N2 - Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.

AB - Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.

KW - Electron spin resonance

KW - Si02/Si interface

KW - Silicon

KW - Thin insulator film

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JO - Japanese journal of applied physics

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IS - 4 B

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Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Abstract

Keywords

ASJC Scopus subject areas

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